@article{Zeng:2023:10.1039/d3nr03486k,
author = {Zeng, X-D and Yang, Y-Z and Guo, N-J and Li, Z-P and Wang, Z-A and Xie, L-K and Yu, S and Meng, Y and Li, Q and Xu, J-S and Liu, W and Wang, Y-T and Tang, J-S and Li, C-F and Guo, G-C},
doi = {10.1039/d3nr03486k},
journal = {Nanoscale},
pages = {15000--15007},
title = {Reflective dielectric cavity enhanced emission from hexagonal boron nitride spin defect arrays.},
url = {http://dx.doi.org/10.1039/d3nr03486k},
volume = {15},
year = {2023}
}

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TY  - JOUR
AB  - Among the various kinds of spin defects in hexagonal boron nitride (hBN), the negatively charged boron vacancy (VB-) spin defect that can be site-specifically generated is undoubtedly a potential candidate for quantum sensing, but its low quantum efficiency restricts its practical applications. Here, we demonstrate a robust enhancement structure called reflective dielectric cavity (RDC) with advantages including easy on-chip integration, convenient processing, low cost and suitable broad-spectrum enhancement for VB- defects. In the experiment, we used a metal reflective layer under the hBN flakes, filled with a transition dielectric layer in the middle, and adjusted the thickness of the dielectric layer to achieve the best coupling between RDC and spin defects in hBN. A remarkable 11-fold enhancement in the fluorescence intensity of VB- spin defects in hBN flakes can be achieved. By designing the metal layer into a waveguide structure, high-contrast optically detected magnetic resonance (ODMR) signal (∼21%) can be obtained. The oxide layer of the RDC can be used as the integrated material to implement secondary processing of micro-nano photonic devices, which means that it can be combined with other enhancement structures to achieve stronger enhancement. This work has guiding significance for realizing the on-chip integration of spin defects in two-dimensional materials.
AU  - Zeng,X-D
AU  - Yang,Y-Z
AU  - Guo,N-J
AU  - Li,Z-P
AU  - Wang,Z-A
AU  - Xie,L-K
AU  - Yu,S
AU  - Meng,Y
AU  - Li,Q
AU  - Xu,J-S
AU  - Liu,W
AU  - Wang,Y-T
AU  - Tang,J-S
AU  - Li,C-F
AU  - Guo,G-C
DO  - 10.1039/d3nr03486k
EP  - 15007
PY  - 2023///
SP  - 15000
TI  - Reflective dielectric cavity enhanced emission from hexagonal boron nitride spin defect arrays.
T2  - Nanoscale
UR  - http://dx.doi.org/10.1039/d3nr03486k
UR  - https://www.ncbi.nlm.nih.gov/pubmed/37665054
VL  - 15
ER  - 

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