BibTex format
@inproceedings{Prodromakis:2010,
author = {Prodromakis, T and Michelakis, K and Toumazou, C},
title = {Fabrication and Electrical Characteristics of Memristors with TiO2/TiO2+x active layers},
year = {2010}
}
RIS format (EndNote, RefMan)
TY - CPAPER
AB - We report on the fabrication and electrical characterisation of memristors with TiO2/TiO2+x active layer. This active layer is deposited at room temperature with RF-sputtering and consists of two sub-layers, the top one of which containsexcess oxygen atoms. Electrical characterisation of the devices demonstrates similar switching characteristics as previously reported for nano-scale memristors with TiO2/TiO2−x active cores.
AU - Prodromakis,T
AU - Michelakis,K
AU - Toumazou,C
PY - 2010///
TI - Fabrication and Electrical Characteristics of Memristors with TiO2/TiO2+x active layers
ER -
