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Citation

BibTex format

@article{Michelakis:2004:10.1109/TED.2004.832727,
author = {Michelakis, K and Vilches, A and Papavassiliou, C and Despotopoulos, S and Fobelets, K and Toumazou, C},
doi = {10.1109/TED.2004.832727},
journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
pages = {1309--1314},
title = {Average drift mobility and apparent sheet-electron density profiles in strained-Si-SiGe buried-channel depletion-mode n-MOSFETs},
url = {http://dx.doi.org/10.1109/TED.2004.832727},
volume = {51},
year = {2004}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AU  - Michelakis,K
AU  - Vilches,A
AU  - Papavassiliou,C
AU  - Despotopoulos,S
AU  - Fobelets,K
AU  - Toumazou,C
DO  - 10.1109/TED.2004.832727
EP  - 1314
PY  - 2004///
SN  - 0018-9383
SP  - 1309
TI  - Average drift mobility and apparent sheet-electron density profiles in strained-Si-SiGe buried-channel depletion-mode n-MOSFETs
T2  - IEEE TRANSACTIONS ON ELECTRON DEVICES
UR  - http://dx.doi.org/10.1109/TED.2004.832727
UR  - https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000222904000014&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a2bf6146997ec60c407a63945d4e92bb
UR  - http://hdl.handle.net/10044/1/1221
VL  - 51
ER  -
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