In this section
@article{Wu:2022:10.1002/anie.202210970,
author = {Wu, C and Fang, W and Cheng, Q and Wan, J and Wen, R and Wang, Y and Song, Y and Li, M},
doi = {10.1002/anie.202210970},
journal = {Angewandte Chemie International Edition},
title = {MXene-regulated perovskite vertical growth for high-performance solar cells},
url = {http://dx.doi.org/10.1002/anie.202210970},
volume = {61},
year = {2022}
}
TY - JOUR
AB - Defects at the interfaces of perovskite (PVK) thin films are the main factors responsible for instability and low photoelectric conversion efficiency (PCE) of PVK solar cells (PSCs). Here, a SnO2-MXene composite electron transport layer (ETL) is used in PSCs to improve interfacial contact and passivate defects at the SnO2/perovskite interface. The introduced MXene regulates SnO2 dispersion and induces a vertical growth of PVK. The lattice matching of MXene and perovskite suppresses the concentration of interfacial stress, thereby obtaining a perovskite film with low defects. Compared with SnO2-based device, the PCE of SnO2-MXene-based device is improved by 15 % and its short-circuit current is up to 25.07mA cm−2. Furthermore, unencapsulated device maintained about 90 % of its initial efficiency even after 500h of storage at 30–40 % relative humidity in ambient air. The composite ETL strategy provides a route to engineer interfacial passivation between metal halide perovskites and ETLs.
AU - Wu,C
AU - Fang,W
AU - Cheng,Q
AU - Wan,J
AU - Wen,R
AU - Wang,Y
AU - Song,Y
AU - Li,M
DO - 10.1002/anie.202210970
PY - 2022///
SN - 1433-7851
TI - MXene-regulated perovskite vertical growth for high-performance solar cells
T2 - Angewandte Chemie International Edition
UR - http://dx.doi.org/10.1002/anie.202210970
UR - https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000859250100001&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a2bf6146997ec60c407a63945d4e92bb
UR - https://onlinelibrary.wiley.com/doi/10.1002/anie.202210970
VL - 61
ER -
