Publications

Citation

BibTex format

@inproceedings{Finney:1994,
author = {Finney, SJ and Williams, BW and Green, TC},
title = {IGBT turn-off characteristics and high frequency application},
year = {1994}
}
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RIS format (EndNote, RefMan)

TY  - CPAPER
AB  - Use of a parallel MOSFET can provide a method of reducing the turn off loss associated with IGBTs and achieve a composite effect of low on-state loss and low switching loss. The technique discussed in this paper will be able to increase the effective minimum on-time of the device and this in itself can provide a limitation on the switching frequencies that can be achieved.
AU  - Finney,SJ
AU  - Williams,BW
AU  - Green,TC
PY  - 1994///
SN  - 0963-3308
TI  - IGBT turn-off characteristics and high frequency application
ER  -
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