BibTex format
@inproceedings{Finney:1994,
author = {Finney, SJ and Williams, BW and Green, TC},
title = {IGBT turn-off characteristics and high frequency application},
year = {1994}
}
RIS format (EndNote, RefMan)
TY - CPAPER
AB - Use of a parallel MOSFET can provide a method of reducing the turn off loss associated with IGBTs and achieve a composite effect of low on-state loss and low switching loss. The technique discussed in this paper will be able to increase the effective minimum on-time of the device and this in itself can provide a limitation on the switching frequencies that can be achieved.
AU - Finney,SJ
AU - Williams,BW
AU - Green,TC
PY - 1994///
SN - 0963-3308
TI - IGBT turn-off characteristics and high frequency application
ER -