@article{Itskou:2024:10.1021/acs.jpcc.4c02314,
author = {Itskou, I and Kafizas, A and Nevjestic, I and Carrero, SG and Grinter, DC and Azzan, H and Kerherve, G and Kumar, S and Tian, T and Ferrer, P and Held, G and Heutz, S and Petit, C},
doi = {10.1021/acs.jpcc.4c02314},
journal = {The Journal of Physical Chemistry C},
pages = {13249--13263},
title = {Effects of phosphorus doping on amorphous boron nitride’s chemical, sorptive, optoelectronic, and photocatalytic properties},
url = {http://dx.doi.org/10.1021/acs.jpcc.4c02314},
volume = {128},
year = {2024}
}

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TY  - JOUR
AB  - Amorphous porous boron nitride (BN) represents a versatile material platform with potential applications in adsorptive molecular separations and gas storage, as well as heterogeneous and photo-catalysis. Chemical doping can help tailor BN’s sorptive, optoelectronic, and catalytic properties, eventually boosting its application performance. Phosphorus (P) represents an attractive dopant for amorphous BN as its electronic structure would allow the element to be incorporated into BN’s structure, thereby impacting its adsorptive, optoelectronic, and catalytic activity properties, as a few studies suggest. Yet, a fundamental understanding is missing around the chemical environment(s) of P in P-doped BN, the effect of P-doping on the material features, and how doping varies with the synthesis route. Such a knowledge gap impedes the rational design of P-doped porous BN. Herein, we detail a strategy for the successful doping of P in BN (P-BN) using two different sources: phosphoric acid and an ionic liquid. We characterized the samples using analytical and spectroscopic tools and tested them for CO2 adsorption and photoreduction. Overall, we show that P forms P–N bonds in BN akin to those in phosphazene. P-doping introduces further chemical/structural defects in BN’s structure, and hence more/more populated midgap states. The selection of P source affects the chemical, adsorptive, and optoelectronic properties, with phosphoric acid being the best option as it reacts more easily with the other precursors and does not contain C, hence leading to fewer reactions and C impurities. P-doping increases the ultramicropore volume and therefore CO2 uptake. It significantly shifts the optical absorption of BN into the visible and increases the charge carrier lifetimes. However, to ensure that these charges remain reactive toward CO2 photoreduction, additional materials modification strategies should be explored in future work. These strategies could include the
AU  - Itskou,I
AU  - Kafizas,A
AU  - Nevjestic,I
AU  - Carrero,SG
AU  - Grinter,DC
AU  - Azzan,H
AU  - Kerherve,G
AU  - Kumar,S
AU  - Tian,T
AU  - Ferrer,P
AU  - Held,G
AU  - Heutz,S
AU  - Petit,C
DO  - 10.1021/acs.jpcc.4c02314
EP  - 13263
PY  - 2024///
SN  - 1932-7447
SP  - 13249
TI  - Effects of phosphorus doping on amorphous boron nitride’s chemical, sorptive, optoelectronic, and photocatalytic properties
T2  - The Journal of Physical Chemistry C
UR  - http://dx.doi.org/10.1021/acs.jpcc.4c02314
UR  - http://hdl.handle.net/10044/1/113991
VL  - 128
ER  - 

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